Lithography
About
Lithography equipment and processes enable the fabrication of micron, submicron, and nanometric resist structures, which serve as temporary masks for the etching or deposition of metal and oxide layers. These processes ensure precise pattern definition on the wafer, enabling high-resolution micro- and nanofabrication.
Description
E-beam Lithography Tool (JEOL 6300FS) : Compatible sample up to 200 mm. Resolution 10nm.
Nanoimprint Lithography UV&Thermal (Obducat Eitre 6) : Compatible sample up to 150 mm. Resolution 10nm.
Direct Write Laser Lithography (Heidelberg µPG 101) : Compatible sample up to 100 mm. Resolution 1um.
Mask Aligner (Karl Suss MJB4 UV) : Compatible sample up to 100 mm. Resolution 1.5um.
Mask Aligner (Karl Suss MJB4 DUV) : Compatible sample up to 100 mm. Resolution 0.8um.
Mask Aligner – Double Face – (Suss Microtec MA8 UV) + NanoImprint Module : Compatible sample up to 100 mm. Resolution 1um.
Maskless Lithography Projection (SmartPrint MicroLight 3D) : Compatible sample up to 100 mm. Resolution 1.5um.
Keywords : lithography, DUV, UV, laser, nanoimprint, ebeam
Technical specifications:
Our lithography equipment and processes enable the fabrication of micron and submicron photoresist structures. Most systems are compatible with sample sizes ranging from small substrates to 200 mm wafers. Overlay and stitching accuracy depends on the lithography tool, with typical performance around 1 µm. Higher precision can be achieved with tools equipped with a laser interferometric stage.
Access Provider / Facilities
