Packaging
About
Packaging integrates the front-end through wafer sealing, electro plating, CMP, 3D co-integration, etc., as well as the back-end with cutting, wire bonding and packaging.
Description
CMP Chemical Mechanical Planarization : Oxide and metal planarization, 50mm and 100mm wafer compatible.
Wafer Bonder Substrate : Sealing wafer, in pressure and temperature – MEMs applications – Small samples, 100mm, 150mm compatible
ECP Electro Plating Deposition : Materials FeNi, AgSn, Cu – Compatible 50mm, 100mm, 200mm
Wire Bonding : Sample size max 10x10cm, Wire Aluminium and Gold, from 18um to 33um wire
Dicing wafer : Compatible with 150mm wafer size and 2500um thickness, diamond blade 50um – Wafer Si, SiC, Quartz, SOI
Dicing wafer : Compatible with 300mm wafer size and 6000um thickness, diamond blade 250um – Wafer Si, SiC, Quartz, SOI
Laser Dicing : Compatible with 300mm max
MEMS Dryer : CO2 supercritic process – MEMS applications – Small samples up to 100mm wafer
Flip Chip Tool : 10x10cm sample size, Pressure and temperature process
Ball Bonding : Process temperature 180-250°C, balls diameter 50-100um, materials Gold, Cu, Alu
Screen printing : Printed on ceramic samples, max. size 100 mm. Printed materials : Silver lake (Pd, Pt, Silver) heated to 850°C.
Keywords : CMP, ECP, ECD, Wire bonding, MEMS dryer, laser dicing, flip chip, balls bonding
Technical specifications:
Packaging capabilities seamlessly integrate with front-end processes through advanced techniques such as wafer sealing, electroplating, chemical and mechanical planarization, 3D integration, and co-integration, as well as Dryer CO2 processing. Most of our equipment supports small-sized pieces up to 100mm wafers, with optional compatibility for 200mm wafers.
In the back-end area, we offer a comprehensive range of tools for precision processing, including diamond blade and laser cutting, wire bonding, balling, flip-chip assembly, and final component packaging.
Access Provider / Facilities
