Van Der Pauw Method For Resistivity & Hall Mobility


The HMS-3000 Hall Measurement System is a complete system for measuring the resistivity, carrier concentration, and mobility of semiconductors using the Van Der Pauw method.

Technical specifications:

  • Maximum sample size (Small board) – 6mm x 6mm, (Large Board/Spring Clip Board) – 20mm x 20mm.
  • Measurement Temperature: 300K (room temperature), 77K (Liquid Nitrogen)
  • Cool-down time: 10sec.
  • Measurement Material: All semiconductors including Si, SiGe, SiC, GaAs, InGaAs, InP, GaN (N Type & P Type can be measured).
  • Data input of depth enables comprehensive measurement of the whole material.
  • Resistivity Range of HMS-3000: 10-4 to 107 (Ohms-cm)
  • Magnet: Permanent magnet (diameter: 50mm)
  • Magnet Flux Density: 0.51 Tesla nominal +/-1% of marked value (Optional 1 Tesla sample kit for 300K testing only)
  • Stability: 2% over 1 years
  • Uniformity: +/- 1% over 20mm diameter from center
  • Pole Gap: 26 mm
  • Hall voltage range: 1uV to 2000mV

Case study:

The HMS-3000 offers the INFRACHIP user a complete solution for measuring resistivity, carrier concentration, and mobility using the Van Der Pauw method, providing precise and reliable data for semiconductor characterization.

The user utilizes the HMS-3000 to accurately determine key parameters such as resistivity, carrier concentration, and mobility, crucial for optimizing semiconductor device performance. For instance, by measuring carrier concentration, he can assess the doping level of semiconductor materials, which directly impacts device conductivity and performance.

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