Plasma Etching
About
Plasma etching tool and processes can etch thin films of up to several microns of metal and oxide. Depending on the tool and the process.
Description
ICP Inductive Coupled Plasma (Sentech) – Semiconductor Material Etch : Si, SiO2, SiN, W, Ta, Nb, and more – EOS & laser end point detection – Gaz process : SF6, CH2F2, O2, H2, Cl2, HBr, CF4, BCl3 – Compatible with samples up to 100mm
ICP Inductive Coupled Plasma (Oxford) – Material Etch : Al, Pt, III-V, II-VI, TiN, SiN, SiO2, Ta, and more – EOS end point detection – Gaz process : SF6, CH2F2, O2, H2, Cl2, HBr, CF4, BCl3 – Compatible with samples up to 100mm
IBE Ion Beam Etching (Plassys) – Large material etching capacity – SIMS end point detection – Compatible with samples up to 100mm
IBE Ion Beam Etching (SCIA) – Large material etching capacity – SIMS end point detection – Compatible with samples up to 150mm
IBE/IBD Ion Beam Etching & Depostion (SCIA) – Large material etching capacity, in situ oxide deposition – SIMS end point detection – Compatible with samples up to 200mm
DRIE Deep Reactive Ion Etching (SPTS Rapier) – Material Etch : Si, SiO2 – MEMS applications – Compatible with samples up to 200mm
HF Vapor (Primaxx) – HF gaz process, vaccum system – Compatible with samples up to 200mm
Plasma O2 Stripper (PlasmaTherm) – Polymere Plasma O2 Stripping – Compatible with samples up to 100mm
Keywords : ICP, DRIE, IBE, Stripper, HF Vapor
Technical specifications:
Etching equipments and processes enable the precise etching of thin films, ranging from metals to oxides, with thicknesses of up to several microns. Depending on the tool, we can accommodate samples from small substrates to 200mm wafers. Etching can be performed either individually or in batches, depending on the process requirements and equipment capabilities
Access Provider / Facilities
