III-V MOVPE
About
MOVPE grown planar III-V epitaxial structures for photonic circuit applications (waveguiding, parametric processes, laser sources etc.)
Description
MOVPE of III-V planar structures on 2” wafers, maximum 3×2” per run.
Both on InP and on GaAs wafers. Typical alloys include: InGaP, AlGaP, AlGaAs, InGaAs, AlInAsP etc.
Technical specifications:
Two inch wafers max, growth temperatures not above 750 degrees (Aix 200 reactor, halogen lamps heated), purified Nitrogen as carrier gas.
Case study:
The MOVPE offering will allow users to obtain ad hoc semiconductor wafers for their photonic and electronic projects
Access Provider / Facilities
Tyndall
