MOVPE grown planar III-V epitaxial structures for photonic circuit applications (waveguiding, parametric processes, laser sources etc.)


MOVPE of III-V planar structures on 2” wafers, maximum 3×2” per run. 

Both on InP and on GaAs wafers. Typical alloys include: InGaP, AlGaP, AlGaAs, InGaAs, AlInAsP etc.

Technical specifications:

Two inch wafers max, growth temperatures not above 750 degrees (Aix 200 reactor, halogen lamps heated), purified Nitrogen as carrier gas.

Case study:

The MOVPE offering will allow users to obtain ad hoc semiconductor wafers for their photonic and electronic projects

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