LPCVD
About
Low-Pressure Chemical Vapor Deposition (LPCVD) is a thermal process used to produce thin films materials from a precursor gas at sub-atmospheric pressures. Typical available materials include amorphous silicon, polysilicon, silicon oxide and silicon nitride.
Description
LPCVD is used to produce conformal thin film materials from the gaseous phase of one or more chemical precursors, which react with (and/or decompose on) the substrate surface. Depending on the process conditions (substrate material, temperature, pressure, gas flow(s), reaction gas composition, etc.), various materials (e.g., poly-Si, SiO2) can be grown. As deposition is controlled by chemical reaction of volatile precursors with the substrate surface, LPCVD can produce highly conformal coatings on structures of complex topography.
Typical applications include the production of electrical insulating films, dopant diffusion blocking and etch stopping layers, anti-reflective coatings and waveguide active layers as well as micro-electromechanical structures like membranes and cantilevers. LPCVD is widely used in the semiconductor industry for the fabrication of integrated circuits, optoelectronic devices, sensors, MEMS, solar cells, etc.
We offer access to three horizontal LPCVD reactors for thin film deposition of materials like poly-Si, SiO2, Si3N4, and LTO on single or multiple (20 max) 4” wafers down to 1 cm2 samples.
Technical specifications:
- Tool: LPCVD Tempress Inc / Omega Junior including 3 horizontal reactors
- Coatings: a-Si, poly-Si, SiO2, Si3N4, SiOxNy, Si-rich SiOx/ SixNy/ SiOxNy
- Reaction Gases: Tetra Ethyl Ortho Silicate (TEOS), Dichloro Silane, Ammonia, Silane
- Temperature: 550 –610oC for a / poly-Si, 425-710oC for SiO2, 810oC for Si3N4
- Pressure: 300 mTorr
- Ramp Up / Ramp Down: 10oC/min
- Sample dimensions: From 100 mm (4”) wafer down to 1 cm x 1 cm square samples
- Operating environment: Clean-room ISO 6 (Class 1000) / ISO 5 (Class 100) at loading station
Access Provider / Facilities
