About

This offer is a combinatorial system from RAITH allowing for electron beam lithography system and scanning electron microscopy. The integrated SEM (ZEISS Gemini) is capable of high-resolution imaging down to nanometer-sized features.

Description

This offer is a combinatorial system from RAITH allowing for electron beam lithography system and scanning electron microscopy.
The system features a high-resolution scanning electron microscope and a laser-controlled sample stage to move the sample with nanometer precision. Using the SEM, a beam of high energy electrons (up to 30 keV) scans over the sample and the back scattered electrons or secondary electrons are detected simultaneously. The backscattered electrons give feedback on the material density and contrast, whereas the secondary electrons’ signal strongly correlates with the surface topography. A vital advantage is its exceptional depth of focus that enables a vivid 3D impression of images.

In combination with microtome sample preparation, this  setup enables depth dependent information of  sheet like systems typically present in functional printed samples. E.g. film forming and thickness analysis of PVDF-Trfe samples consisting of substrate – electrode – active layer – electrode.

Technical specifications:

Specifications:

Max. sample size: 100 mm × 100 mm (4” wafer) on flat sample holder, 20 mm × 20 mm on tiltable / rotatable stage

  • Max. sample height: 20 mm
  • Max acceleration voltage: 30 kV
  • Max aperture size: 30 µm
  • Emitter type: Thermionic (tungsten emitter)
  • SEM Column: Zeiss Gemini

Suitable Samples:

Conductive, non-conductive sample surfaces require coating with a thin Ag/Pd layer of a few tens of nanometers

Case study:

After imprinting a user wants to identify potential errors in the replication. Therefore scanning electron microscopy is used to inspect the samples. With this method the quality is checked on various length scales from mm down to several nm resolution using this setup.

Access Provider / Facilities

JOANNEUM RESEARCH