Rapid Thermal Processing

RTP is commonly referred to as (1) Rapid Thermal Annealing (RTA) or (2) Rapid Thermal Oxidation (RTO) in case processing is done under (1) vacuum, neutral (N2, Ar) or forming gas (N2 / H2) ambient, or (2) oxidizing (e.g., O2) atmosphere. RTP is commonly used to repair lattice damage after ion implantation and activate the implanted dopant impurities while minimizing their diffusion, to densify deposited materials, to form ohmic contact alloys, to heal an interface from defects, to grow thin silicon dioxide films, etc.  

 

We offer access to the Annealsys AS-One system for RTA and RTO processing of substrates up to 100 mm (4”) in diameter at temperatures up to 1250oC. 

• Tool: AS-ONE, Anneal Sys  

• System Type: Stainless steel cold wall chamber 

• Exposure: 12 infrared halogen lamp furnace 

• Temperature Control: optical pyrometer (400oC -1300oC) 

• Sample Size: From single 4” wafer down to 1 cm x 1 cm samples 

• Operating Temperature:  400oC – 1250oC 

• Maximum Heating Time: 120 min < 800oC, 60min@900oC, 12min@1000oC, 10min@1050oC, 7min@1100oC, 6min@1150oC, 5min@1200oC, 3min@1250oC 

• Temp. Ramp Up – Ramp Down: RU: from 200oC/s, RD: 100oC/s 

• Temperature Reproducibility: ± 1oC 

• Temperature Uniformity: N/A 

• Temperature Control Accuracy: ± 2oC 

• Pressure: Atmospheric or Vacuum with or without gas flow 

• Gasses (flow rates): O2 (0 – 2000sccm), N2 (0 – 2000sccm) 

• Environment: Clean-room ISO 6 (Class 1000) 

Access Provider / Facilities