Flexifab Nanofabrication Cleanroom

Range of cleanrooms designed for flexible process & product development

• Silicon MOS Fabrication
• MEMS Fabrication
• Compound Semiconductor Fabrication
• Photonics Fab Training Facility
• e-Beam Lithography
• Non-standard nano-processing

Lithography

• Photo and e-beam lithography

Metal/dielectric deposition

• e-beam evaporation
  • Temescal FC2000: Metals. 5mm pieces to 100mm wafers. Rate: 0.1Å/s to 20Å/s
  • Temescal/Ferotec UFC4900: Metals. 5mm pieces to 200mm wafers. Rate: 0.2Å/s to 50Å/s
  • Oxford PVD: Metals. 100mm wafers
  • Leybold SyrusPRO 720: dielectric coater. 5mm pieces to 100mm wafers. Rate: 0.1Å/s to 20Å/s
• Sputtering
  • Nordiko 2500: ∅4″ Up to 12 wafers. Substrate bias (RF & DC). Process gases: Ar, N₂
  • Lesker Sputterer: ∅4″ or ∅6″ Substrate bias (RF & DC). Substrate heater (up to 500°C). Process gases: Ar, O₂, N₂
• PECVD
  • STS PECVD: ∅4” 300°C. Applications Films: SiO₂, Si₃N₄, low-stress Si₃N₃
• Electroplating: Digital Matrix Copper Plating

Etching

• Oxford ICP plasma etcher for thin film III-V materials, GaAs, InP and ternary alloys, GaN, AlN and ITO using Cl-based chemistry
• Synapse Plasma etcher for thin film dielectric materials, SiO2, Si3N4, SiC and BCB using F- based chemistry

Other

• Wafer bonding
• Wafer cleaning

Examples of nanoelectronic devices and test structures fabricated at FlexiFab

• Integration of new materials, device and subsystem concepts
• Nanoelectronics, nanophotonics, nanobiotechnology
• Devices, sensors and NEMS
• e-beam for nanowire patterning – sub 10nm dimensions
• Technologies for 2D contacting to nano-scale structures
• e-beam contacting on flakes: Graphene, transition metal dichalcogenides (TMD) monolayers (e.g. MoS₂)
• Metal contact tracks enabled using the electron beam or FIB (Focused ion beam) milling – allows customization of nanowire structures at dimensions of 10nm

Flexifab Nanofabrication Cleanroom (3D Virtual Tour)

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