Deposition

DC and RF sputtering system: Is a cluster sputtering system for DC and RF; Materials deposited are W, Ni, Ti, TiN, Al, AlSi, AlCr, SiO₂, Ta₂O₅, Al₂O₃, HfO₂, etc; on 6″ wafers.

Sputtering system: Is a single wafer system for DC and RF; Materials deposited are Au, Ti, TiN, Al, AlSi, SiO₂, Al₂O₃, etc on 8″ wafer.

E-beam evaporator:  

FHR Star 200 EVA: Single wafer system; Materials deposited are Au, Ti, TiN, Al, AlSi, SiO₂, Al₂O₃, Pd, Pt, Cr, etc. on 8″ wafers.

Plasma-enhanced chemical vapor deposition (PECVD): For deposition of graphene/graphite up to 200 mm thickness on 8″-wafer

Atomic Layer Depostion (ALD): 

FlexAL process: Al₂O₃, AlN, TiO₂, TiN, on 8″ wafer

AtomFab process: Al₂O₃, AlN, on 8″ wafer

Sputtering system: Process gases are Ar, N₂, O₂.

E-beam evaporator:  FHR Star 200 EVA 

Plasma-enhanced chemical vapor deposition (PECVD): plasma-enhanced up to 850 °C, up to 3000 W or thermal up to 1200 °C; Process gases are Ar, H₂, O₂, CH₄,

Access Provider / Facilities