Dry Etching
About
Inductively Coupled Plasma Reactive Ion Etcher(ICP-RIE): Oxford Instruments PlasmaLab System 100 Microwave Plasma Etcher: Tepla - Semi 300
Description
ICP-RIE: 3 Automatic systems for chlorine-, fluorine- and bromine based chemistry on substrate sizes from 1x1cm² up to 8″ wafers
Plasma etcher: Batch and single wafer processing of O₂ and CF₄ processes sample size and 6″ wafers
Technical specifications:
ICP-RIE:
RIE 1: Automatic chlorine and bromine based process gases: HBr, Cl₂, CHF₃, O₂, N₂, Ar
RIE2: Automated chlorine, bromine- and fluorine-based process gases: HBr, BCl₃, Cl₂, C₄F₈, CHF₃, CF₄, SF₆, O₂, N₂, Ar, He
RIE3: Automated system fluorine and chlorine-based process gases: HBr, BCl₃, Cl₂, C₄F₈, CHF₃, CF₄, SF₆, O₂, N₂, Ar, He
Access Provider / Facilities
AMO GmbH
