Physico-chemical Characterisation

Thanks to its very versatile loading capacities (small samples and wafers up to 300mm, Glove box available), associated to the advanced specifications of the characterization chambers, a very wide range of academics or industrials upfront studies are possible.

The modules of the characterization platform include 3 vacuum characterization chambers, each equipped with their vacuum quasi-insitu transfer systems.

They were built from academic suppliers’ systems which have been customised. 

Their key features are :

    – pARXPS chamber (parallel angular XPS, without any sample tilt).

    – Broadband spectroscopic ellipsometry chamber: MIR 12µm (0.1 eV) to VUV 145 nm (8.55 eV), 

       equipped with an IR polarimeter, and a heating chuck (450°).

    – Combined Raman – Photoluminescence chamber (3 lasers: 355nm / 532nm / 1064 nm).

Here are the key specifications of the characterisation chambers, each one compatible with small samples and wafers up to 300mm :

XPS (Thermo Fisher) :

pAR-XPS (parallel angle resolved XPS)   

Angles from 20° to 80° without sample tilt

Spot size 20 to 400µm              

Ion beam Ar etching for abrasion

Ellipsometry (Horiba Jobin Yvon) :

IR to V-UV : 12 µm (0,1 eV) to 145 nm (8,55 eV)

IR polarimetry

Azimutal rotation

Sample heating (up to 450°C)

Raman / Photolum  (Horiba Jobin Yvon) :

Based on Labram HR (best in class Raman system)

IR to UV (3 lasers : 355nm / 532nm / 1064 nm)

Confocal measurements (depth resolution)

Spatial resolution < 3µm

Resende, J., Fuard, D., Le Cunff, D., Tortai, J.-H., Pelissier, B.
Hybridization of ellipsometry and energy loss spectra from XPS for bandgap and optical constants determination in SiON thin films
(2021) Materials Chemistry and Physics, 259, art. no. 124000, .
DOI: 10.1016/j.matchemphys.2020.124000

Pelissier, B., Labau, S., Martin, M., Petit-Etienne, C., Fontaine, H., Baron, T., Joubert, O.
Study of physisorption phenomena of chemical species on 300 mm Si wafers during controlled mini-environment transfers between microelectronic equipments
(2020) Microelectronic Engineering, 231, art. no. 111401, .
DOI: 10.1016/j.mee.2020.111401

Vallat, R., Gassilloud, R., Salicio, O., El Hajjam, K., Molas, G., Pelissier, B., Vallée, C.
Area selective deposition of TiO 2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme
(2019) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 37 (2), art. no. 020918, .
DOI: 10.1116/1.5049361

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