Dry etching processes using ICP RIE plasma tool. Tool allows for cryogenic temperature processing.


We offer ICP RIE plasma etching (PlasmaPro 100 ICP Oxford Instruments). The tool allows for the etching of a wide range of dielectrics, metals, and semiconductors. Depending on the process, high selectivity and highly anisotropic etch profiles, including vertical wall profiles, can be achieved. 

Cryogenic etching of silicon with a high aspect ratio is available. The etching process can be controlled in situ using a laser interferometric system.

Technical specifications:

– Processing of standard and non-standard substrates up to 200 mm in diameter

– Possibility of etching of metals, dielectrics, and semiconductors.

– Available gases: Ar, O2, SF6, CHF3, Cl2, BCl3, 

– RF generator 13,56 MHz, ICP source 2 MHz

– Electrode temperature: -150 OC – 80OC

Case study:

A user would like to etch selectively the layer with a high aspect ratio on a patterned substrate. The process can be used to etch the photonic integrated elements (waveguides, MMI, grating couplers, etc.).

Access Provider / Facilities